Continuous-wave and passively Q-switched laser performance of LD-end-pumped 1062 nm Nd:GAGG laser

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

the realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO4 crystal and a Cr:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO4 optically contacted on a 0.4 mm long Cr:Y...

Passively Q-switched diode-pumped Er:YAG solid-state laser.

We demonstrated laser operation of a passively Q-switched diode-pumped Er:YAG solid-state laser emitting at 1645 or 1617 nm depending on the initial transmission of the Cr:ZnSe saturable absorber. The crystal emitted up to 10 W at 1645 nm and up to 8 W at 1617 nm in CW mode while pumped with 65 W of incident pump power at 1533 nm. In passive Q-switched mode with 40 W of incident power, a Cr:ZnS...

Diode edge-pumped passively Q-switched microchip laser

There is an increasing demand for high-intensity subnanosecond lasers for emerging industrial applications. While femtosecond and picosecond laser sources are considered promising, they suffer from the significant drawbacks of increased complexity and cost. In this regard, we demonstrate a unique edge-pumped passively Q-switched Nd∶YAG∕Cr4þ∶YAG microchip laser. The microchip is made of a Nd∶YAG...

A Passively Q-Switched, CW-Pumped Fe:ZnSe Laser

We report the demonstration of high-average-power passively Q-switched laser oscillation from Fe2+ ions in zinc selenide. A semiconductor saturable absorber mirror was used as a passive Q-switch element. Using a 60% R outcoupler, the pump-limited output power was 515 mW. The spectral center of the laser was 4045 nm. The pulse repetition frequency (PRF) at maximum power was ∼850 kHz with a corre...

Passively Q-switched Nd:YAG/KTA laser at 561 nm